BT IC substrate is specifically engineered for high-frequency 5G RF modules, Antenna-in-Package (AiP), and millimeter-wave communication applications. Modified BT resin systems achieve dissipation factor (Df) as low as 0.005 @ 28 GHz through spherical silica-filled formulations. These substrates ...
BT IC substrate is specifically engineered for high-frequency 5G RF modules, Antenna-in-Package (AiP), and millimeter-wave communication applications. Modified BT resin systems achieve dissipation factor (Df) as low as 0.005 @ 28 GHz through spherical silica-filled formulations. These substrates support 14-layer any-layer structures with embedded bandpass impedance transformers for compact 28 GHz AiP modules. With stable dielectric properties across frequency (Dk 3.4-4.0, Df 0.004-0.010 @ 1 GHz), BT substrates deliver signal transmission loss ≤0.015 dB/mm at 28 GHz, making them ideal for 5G front-end modules, automotive radar, and high-frequency communication systems.
– 14-layer BT substrates with embedded bandpass impedance transformers enable compact 28 GHz antenna modules with stable passband characteristics and 15% fractional bandwidth.
– Low Df (≤0.005 @ 28 GHz) and signal loss ≤0.015 dB/mm ensure minimal signal degradation in 5G transceiver front-ends.
– Stable dielectric properties across temperature and frequency make BT substrates suitable for 77 GHz automotive radar modules requiring high reliability under thermal cycling.
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